Abstract
We report on a zero magnetic field transport study of a two-dimensional, variable-density, hole system in GaAs. As the density is varied we observe, for the first time in GaAs-based materials, a crossover from an insulating behavior at low density, to a metalliclike behavior at high density, where the metallic behavior is characterized by a large drop in the resistivity as the temperature is lowered. These results are in agreement with recent experiments on Si-based two-dimensional systems. We show that, in the metallic region, the resistivity is dominated by an exponential temperature dependence with a characteristic temperature which is proportional to the hole density.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
