The metal-free magnetism and ferromagnetic narrow gap semiconductor properties in graphene-like carbon nitride

Abstract

In spintronics, if a two-dimensional (2D) organic metal-free material has stable magnetism and narrow gap semiconductor properties, it will have a very bright application prospect. A graphene-like carbon nitride (g-C13N13) that we design just meets these requirements. As a new structure, firstly the stability of the g-C13N13 has been verified. It has stable electron spin polarization and the magnetic moment of each primitive cell is 1μB. It exhibits ferromagnetic narrow gap semiconductor properties through our analysis of energy band structure and charge density. Ferromagnetic ordering between two adjacent primitive cells is stable. The Monte Carlo simulation using the Ising model shows the Curie temperature material is 204 K. Our research is an inspiration for the applications of this kind of materials in spintronics devices.