Abstract
Seismic sensors are the key sensitive components in geophysical exploration, and the new-type electrochemical seismic sensors have gradually aroused researchers’ interest for their superior performance in low-frequency domain and large working inclination. In this paper, a method was developed to fabricate the MEMS (micro-electro-mechanical systems) based integrated electrodes for the electrochemical seismic sensors. The proposed integrated electrodes which employed three-layer anodic bonding structure of silicon-glass-silicon served as the substitutes for multilayer manual assembly structures. Compared to previous counterparts, this integrated structure has the advantages of simplified assembly processes of sensitive unit and high consistency as the no requirement of manual alignment. The results shown that the cross-correlation coefficient between two proposed devices was quantified as 0.998 with the sensitivity of 5956 V/(m/s) @1Hz. This electrode is so far the sensitive structure which realize both high sensitivity and high integration in the electrochemical seismic sensors.
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