Abstract
The properties of a-SiC:H/c-Si heterostructures formed at various alloy carbon contents are studied. A dominant mechanism of carrier transport in the heterostructures is established. Equivalent electric circuits, which make it possible to describe the current-voltage characteristics of heterostructures over entire bias range under study, are suggested. The band-gap temperature coefficient and electron affinity for a-SiC:H are estimated.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
