Abstract
Numerical tests of possible models for the oxygen dependence of the divacancy introduction rate in silicon electron irradiated at room temperature were performed on a computer. Only the model in which oxygen traps Si self-interstitials can reproduce all the experimental data. Our modeling results (in conjunction with the experimental data) imply that during room-temperature electron irradiation of Si the indirect production of divacancies can be more important than the direct production of V2 via the single-collision process.
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