Abstract
Bimolecular description of the mechanism of radiative recombination in the region of interband transitions fails to explain the linear dependence of the electroluminescence (EL) intensity on the current in single crystal silicon at 300 K for a high level of injection and the exponential decay of emission after switching off the current. The results of experiments can be adequately interpreted within the framework of an exciton mechanism of the radiative recombination in silicon.
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