Abstract
The formation process of defect clusters in MgO · nAl2O3 has been studied not only for understanding the mechanism of the nucleation and growth process of defect clusters but also for getting insights into the reason why this material shows radiation resistance. Defect analysis was performed to determine the sequential change of dislocation loops under irradiation with fission neutrons and during concurrent irradiation with ions and electrons. Effective recombinations of interstitials with structural vacancies and large nuclei of stable interstitial loops are possible mechanisms for high radiation-resistance of this material. Furthermore, homogeneous ionizing radiation plays no significant role on the formation process of defect clusters.
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