Abstract
This paper discusses the mechanical and electrical effects on 3C-SiC and Si thin film as a diaphragm for MEMS capacitive pressure sensor operating for extreme temperature which is 1000 K. This work compares the design of a diaphragm based MEMS capacitive pressure sensor employing 3C-SiC and Si thin films. A 3C-SiC diaphragm was bonded with a thickness of 380 μm Si substrate, and a cavity gap of 2.2 μm is formed between the wafers. The MEMS capacitive pressure sensor designs were simulated using COMSOL ver 4.3 software to compare the diaphragm deflection, capacitive performance analysis, von Mises stress, and total electrical energy performance. Both materials are designed with the same layout dimensional with different thicknesses of the diaphragm which are 1.0 μm, 1.6 μm, and 2.2 μm. It is observed that the 3C-SiC thin film is far superior materials to Si thin film mechanically in withstanding higher applied pressures and temperatures. For 3C-SiC and Si, the maximum von Mises stress achieved is 148.32 MPa and 125.48 MPa corresponding to capacitance value which is 1.93 pF and 1.22 pF, respectively. In terms of electrical performance, the maximum output capacitance of 1.93 pF is obtained with less total energy of 5.87 × 10−13 J, thus having a 50% saving as compared to Si.
Highlights
More recent developments in the field of robust micromechanical system (MEMS) for extreme environment such as MEMS pressure sensor have been widely used in airplanes, submarines, gas turbine engine, automobiles, and biomedical devices [1]
The COMSOL 4.3 simulation is simplified and performed on MEMS capacitive pressure sensor diaphragm as depicted in Figures 6 and 7
The simulation results through interactive 3D plots of COMSOL ver. 4.3, 3C-SiC, improved the capacitance performance increase linearly with maximum capacitance of 1.93 pF compared to Si increasing nonlinearly with maximum capacitance of 1.22 pF
Summary
More recent developments in the field of robust micromechanical system (MEMS) for extreme environment such as MEMS pressure sensor have been widely used in airplanes, submarines, gas turbine engine, automobiles, and biomedical devices [1]. The 3CSiC is promising materials that have excellent mechanical and thermal stability for the fabrication MEMS capacitive pressure sensor operating for extreme environment [3]. The mechanical and electrical properties of 3C-SiC show great promise and effective materials that are highly wear resistant with good mechanical and electrical properties including high temperature strength, chemical stability, and excellent thermal shock resistance applications. Wijesundara and Azevedo have investigated electrical properties of 3C-SiC which is one of the best materials for extending the capabilities of excellent electrical properties such as wide band-gap (2.3 eV), high breakdown field (1.8 × 1017 cm−3), high-saturated drift velocity (2.5 × 107 cms−1), higher thermal conductivity (5 W/cm-K), and electrically robust materials that have been adequately applied in a high temperature, harsh environment, and high power density for MEMS application [4]. The 3C-SiC provides a mechanically superior material compared to Si that can remain constant
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