Abstract
The diffuse reflection spectrum of a powdered semiconductor is characterized by an increase in the diffuse reflectivity as the individual particles become relatively transparent. This increase has a definite linear region of greatest slope which is attributed to an exponential drop in the absorption coefficient. The onset of this exponential drop is suggested as a more universal method of determining absorption edges, and when applied to the interpretation of diffuse reflection spectra gave the following energy gaps (at room temperature) amorphous selenium 1.86 eV, metallic selenium 1.74 eV, silicon 1.20 eV, and germanium 0.69 eV.
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