Abstract
Abstract We irradiated platinum samples at T < 15 K with 1.9 MeV electrons. After the radiation we applied hydrostatic pressure (up to 4 kbars) and we observed radiation defect annealing during a linear temperature increase. We looked for displacement of the IC and ID annealing substages under pressure. We found that the close pair recombination stage IC shifted less than 0.1 K under pressure of 4 kbars. It corresponds to an activation volume |ΔV|< 0.01 ω (ω is atomic volume). The ID free interstitial recombination stage is shifted to higher temperatures under pressure by at least 0.5 K for 4 kbars. This shift gives a positive activation volume ΔV ≥ 0.04 ω. However the amplitude at this stage is small in our experiment and it makes this evaluation less certain.
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