Abstract
In the present work, the temporal dynamics of relaxation of a nonequilibrium concentration of charge carriers in SI-GaAs:Cr and EL2-GaAs semiconductor crystals has been studied using pump-probe terahertz spectroscopy. The obtained experimental data were analyzed taking into account the mechanisms of surface and bulk Shockley–Reed–Hall recombination, radiative recombination, interband and trap assisted Auger recombination. It was found that at injection levels arising upon excitation of samples by laser radiation with a pulse duration of 35 fs and an energy of 0.1 mJ per pulse at a central wavelength of 791 nm, Auger recombination mechanisms have a significant effect. Auger recombination mechanisms make a dominant contribution to the recombination rate of nonequilibrium charge carriers at injection levels above 2·1018 cm–3 for SI-GaAs:Cr and above 1018 cm–3 for EL2-GaAs. At lower injection levels, the bulk and surface Shockley-Reed-Hall recombination are the dominant recombination mechanisms.
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