Abstract
In this research, we regulate the band gaps of some typical zinc-blende semiconductors by applying an external electric field. The variation of the geometric structures and the band gaps of AlP, AlAs, AlSb, GaP, GaAs, ZnO, ZnSe and ZnTe have been studied. We also calculated the stability, density of states, band structures and the charge distribution by the first-principles method based on density functional theory. Moreover, the giant Stark effect coefficients have also been analyzed in detail. From our results, we find that the magnitude and the direction of the electric field has a significant regulation effect on the band gaps and the electronic structures of AlP, AlAs, AlSb, GaP, GaAs, ZnO, ZnSe and ZnTe, which induces a phase transition from semiconductor to metal beyond a certain electric field. Therefore, we can regulate the physical properties of this type of semiconductors by tuning the magnitude and the direction of the electric field. This is very important for practical applications in nanoelectronic devices.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
