Abstract
The extraordinary Hall balance (EHB) is a general device concept that harnesses the net extraordinary Hall effect (EHE) arising from two independent magnetic layers, which are electrically in parallel. Different EHB behavior can be achieved by tuning the strength and type of interlayer coupling, i.e., ferromagnetic or antiferromagnetic of varying strength, allowing for logic and memory applications. The physics of the EHE in such a multilayered systems, especially the interface-induced effect, will be discussed. A discrepancy between the magnetization and the Hall effect, called the magneto-Hall difference (MHD) is found, which is not expected in conventional EHE systems. By taking advantage of the MHD effect, and by optimizing the materials structure, magnetoresistance ratios in excess of 40,000% can be achieved at room-temperature. We present a new design, the planar EHB, which has the potential to achieve significantly larger magnetoresistance ratios.
Highlights
The pace of the improvement of computing hardware has been slowing down, because the device technologies it is built on have been nearly optimized to their limits
The success of magnetic random access memory (MRAM),[2] which builds on magnetic tunnel junctions (MTJs), and which has been proposed to be used for both memory and logic gates,[3] has been affected by the low magnetoresistance ratios (MRRs)
An ideal solution is a new device element that inherits the advantages of an MTJ, while the readout scheme is radically altered, overcoming the limitation given by the expression for the tunneling MR (TMR), and resulting in an unlimited MRR between the two physical states
Summary
The pace of the improvement of computing hardware has been slowing down, because the device technologies it is built on have been nearly optimized to their limits. An ideal solution is a new device element that inherits the advantages of an MTJ, while the readout scheme is radically altered, overcoming the limitation given by the expression for the TMR, and resulting in an unlimited MRR between the two physical states. We introduced a new device concept, the extraordinary Hall balance (EHB).[6] This device concept is remarkably simple since it only uses conventional ferromagnets and amorphous or polycrystalline barriers, yet shows MRRs of more than 40,000% at room-temperature.[7] The basic device element can be precisely tuned to allow for the embedding of added functionalities.[7,8] owing to its simplicity in terms of materials and processing, complex heterostructures can be grown which function as multi-valued memory stacks.[9] In a sense, an EHB is a special type of MRAM, which consists of two ferromagnetic stacks separated by an insulating layer. We introduce a new planar EHB design that overcomes these challenges by separating the functional elements spatially
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