Abstract
The enhanced ICP (E-ICP) etcher with various magnetization frequency of external coil current has shown improved etch characteristics in silicon dioxide etch with CF 4 gas, and it improves the etch rate of silicon dioxide with the C 4F 8 gas also. It has better improvement in etch rate at low pressure process for C 4F 8 gas; approximately 80% at 1.33 Pa (10 mtorr) and 30% at 2.66 Pa (20 mtorr). We compared the magnetization frequency dependence of etch rates for three different types of gas parameters, C 4F 8 gas with 60% of Ar gas, C 4F 8 gas only, and CF 4 gas. Time-resolved measurements were accomplished for Ar plasma to have better perspective of the E-ICP operation. Improvement of etch characteristics is expected when the E-ICP frequency resonates to a lifetime of some desirable states. Further refined analysis of E-ICP with time-resolved measurement would explain the reasons of improvement in etch characteristics.
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