Abstract
The manipulation of valley splitting has potential applications in valleytronics, which lacks in pristine two-dimensional (2D) InSe. Here, we demonstrate that valley physics in InSe can be activated via the magnetic proximity effect exerted by ferromagnetic FeI2 substrate with spin-orbit coupling. The valley splitting energy can reach 48 meV, corresponding to a magnetic exchange field of ~800 T. The system also presents magnetic anisotropy behavior with its easy magnetization axis tunable from in-plane to out-of-plane by the stacking configurations and biaxial tensile strain. The d-orbital-resolved magnetic anisotropic energy contributions indicate that the tensile strain effect arises from the increase of hybridization between minority Fe dxy and states. Our results reveal that the magnetic proximity effect is an effective approach to stimulate the valley properties in InSe to extend its spintronic applications, which is expected to be feasible in other group-III monochalcogenides.
Highlights
The contemporary semiconductor industry demands exponentially growing computational power of integrated circuits with continuous decreasing physical size of the transistors to only a few nanometers
The valley degeneracies are often lifted by introducing a nonzero magnetic moment to the materials through the defect doping of magnetic ions or vacancies, applying a magnetic field, or the magnetic proximity effect (MPE), which may enable the valley-specific band engineering and application of these materials in novel magneto-optical and valleytronic devices
In C-4 to C-6, the InSe are rotated by 180◦, the atom arrangement information is as follows: in C-4, In and Se atoms sit on top of Fe and I1 atoms and the I2 atoms are at the hollow sites of In-Se rings
Summary
The contemporary semiconductor industry demands exponentially growing computational power of integrated circuits with continuous decreasing physical size of the transistors to only a few nanometers. For efficient use of the valley degree of freedom, this balance must be broken to create, switch, and detect valley polarization for distinguishing and manipulating the carriers at different valleys To this end, the valley degeneracies are often lifted by introducing a nonzero magnetic moment to the materials through the defect doping of magnetic ions or vacancies, applying a magnetic field, or the magnetic proximity effect (MPE), which may enable the valley-specific band engineering and application of these materials in novel magneto-optical and valleytronic devices. The MPE in TMDCs-based systems are facilitated via the d–d orbital interaction from the transition metals involving both the substrate and the functional layers. Photodetectors based on InSe nanosheets exhibit high photoresponsivity and fast response time within a broad spectral range It presents anisotropic crystalline structure with layers formed by two deformed hexagonal sublayers. Through the d-orbital-resolved MAE analysis, the effect of tensile strain mainly arises from the increase of the hybridization between the minority Fe dxy and dx2−y2 states
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