Abstract
Co-doped ZnO ferromagnetic films were prepared by direct current reactive magnetron co-sputtering at significantly low growth temperature ( ∼ 200 ∘ C ) . Employing complementary characterization we show that a solid solution of Co throughout the ZnO films, where Co is in the 2+ state substituting for Zn. Room temperature ferromagnetism with magnetic moment of 1.1 μ B / Co and a high Curie temperature T C of 750 K are observed in (4 at%) Co : ZnO films, which is not carrier mediated, but co-exists with the dielectric state. The combination of film growth by certain concentration of cobalt doping ( ∼ 4 at % ) and low growth temperature deposition is proved to be key in enhancing the ferromagnetism. The mechanisms responsible for the ferromagnetism in insulating Co : ZnO films are discussed, which is of help for a better understanding of ferromagnetism in transition-metal-doped oxides.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
