Abstract
A fundamentally new, physically-based power MOSFET model features continuous and accurate curves for all three interelectrode capacitances. The model equations are derived from the charge stored on two internal nodes and the three external terminals. A straightforward parameter extraction technique uses the standard gate-charge plot or process data and is matched with interelectrode capacitance measurements. Simulations are in excellent agreement with measurements. The model is used to design a snubber for a flyback converter.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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