Abstract
A new family of Cd1-xSrxSe semiconductor quantum dot was synthesized using ions exchange method. The TEM measurement inspected that the Cd1-xSrxSe crystals have spherical particles with mean sizes in the range of 3.1 nm to 7.8 nm reliant to the quantity of Sr-dopant assimilated in CdSe. The optical absorbance spectra indicated that the Sr-dopant created sublevels within the bandgap of the CdSe, which caused a red shift displacement of the spectral curves. The luminescent emission spectral bands showed an improvement of the intensity of the luminescent emission spectra and narrowing of their bandwidth. It is also showed that the bandgap lowered from 3.62 eV to 2.74 eV. The Sr-dopant enhanced the quantum yield from 23 % to 87 %. The intensive, sharp luminescent emission light emerged from the developed Cd1-xSrxSe QD crystals with quantum efficiency of 87 %, pave the way for a novel family of QDs capable to be employed for lasing and multicolor light emitting diodes application.
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