Abstract
The luminescence of ZnSe is investigated as a function of excitation intensity for temperatures between 5 K and 300 K. At low excitation we observe emission due to free and bound excitons and due to donor-acceptor pair recombination. At higher excitation, the emission is dominated by inelastic exciton-exciton and exciton-free carrier scattering at lower and higher temperatures, respectively. A “M-band” observed in ZnSe and ZnTe is tentatively ascribed to a biexciton decay. The biexciton binding energies are 2±1 meV for ZnSe and 1,5±1 meV for ZnTe.
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