Abstract
Highly luminescent Zn1-xHoxSe (0 ≤ x ≤ 0.05) QDs were prepared using the polyol-assisted microwave approach for light-emitting device applications. The influence of the holmium atoms (Ho) on the structure and morphology of the ZnSe nanocrystals was emphasized using X-ray diffraction (XRD) and transmission electron microscope (TEM) measurements. The inclusion of the Ho-atoms in the ZnSe nanocrystals increases the particle size while preserving the cubic phase of the ZnSe nanocrystals. The inclusion of the Ho-atoms in the Zn-sites of the ZnSe nanocrystals decreases the optical bandgap. The photoluminescence measurements revealed that the introduction of the Ho-atoms in the Zn-sites of the ZnSe nanocrystals results in a redshift of the emission peaks and the increase of the luminescence intensity. Furthermore, the bandwidth of the emitted light is decreased due to the incorporation of the Ho-atoms in the ZnSe nanocrystals. The increase of the Ho-atoms concentration led to a decrease of the Stokes shift and an increase of the quantum yield reached 81%. Therefore, the developed synthetic recipe and the partial replacement of the Zn-atoms by Ho-atoms in the ZnSe crystal structure may open a new door to use the Zn1-xHoxSe QDs for LEDs application.
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