The luminescence characteristics of CsI(Na) crystal under α and X/γ excitation

Abstract

In this paper, we study the effective decay time characteristic of CsI(Na) crystal under 239Pu alpha particle and 137Cs gamma-ray excitation using a single photon counting decay time measurement system. The measurement system employs a silicon optical fiber to couple and transit single photon. The slow decay time component of CsI(Na) crystal is 460–550 ns. We observe a 15 ns fast decay component under alpha particle excitation. In addition, we find that the primary stage of the falling edge in the decay time curve is non-exponential and drops rapidly when CsI(Na) crystal is excited by 239Pu alpha particles. Since the high density of self-trapped-excitons (STEs) is produced in alpha particle excitation process, we propose that the fast falling edge is corresponding to the quenching process of STEs which transit with non-radiation in the case of high excitation density. To prove this proposal, we excited the CsI(Na) crystal with sub-nanosecond intensive pulsed X-ray radiation. Our X-ray impinging results show that the fast falling edge also exists under low energy (average 100 keV) bremsstrahlung X-ray excitation.