The low-field Hall effect, deviation from Matthiessen's rule and the two-group model for dislocated high-purity copper

Abstract

The low-field Hall effect at 4.2 K and deviations from Matthiessen's rule between 4.2 K and 140 K were studied for dislocated samples of high-purity copper. In the framework of the two-group model it is shown that for a good agreement between low-field Hall effect and DMR data it is necessary to take into account the different averaging of relaxation times for low-field Hall effect and electrical resistivity. The mathematical analysis used leads to a definition of neck angle in the two-group model.