Abstract
AbstractThe amorphous silicon thin transistor (a-Si TIFT) has successfully industrialized the active matrix liquid crystal displays (AMLCDs), which would get a vast market on the basis of their wide potential use for displays. Whereas, the polysilicon TFT (p-Si TFT) also has been intensely investigated and intended to realize smarter AMLCDs, with monolithic peripheral circuits.In this paper, we will discuss the applicable range of low temperature p-Si TFTs compared with high temperature p-Si TFTs. After reviewing the materials which comprise low temperature p-Si TFTs, we will introduce our self aligned aluminum gate process which could allow fast addressing even in enlarged AMLCDs in the future.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
