Abstract
In this study, the influence of substrate temperature on properties of Al-N co-doped p-type ZnO films is explored. Benefitting from the high ionization rate in high-power impulsed magnetron sputtering, the concentration of ionized nitrogen N+ and ionized zinc Zn+ were increased, which promoted the formation of ZnO films and lowered the necessary substrate temperature. After optimization, a co-doped p-type ZnO thin film with a resistivity lower than 0.35 Ω cm and a hole concentration higher than 5.34 × 1018 cm−3 is grown at 280 °C. X-ray diffraction results confirm that Al-N co-doping does not destruct the ZnO wurtzite structure. X-ray photoelectron spectroscopy demonstrates that the presence of Al promotes the formation of acceptor (No) defects in ZnO films, and ensures the role of Al in stabilizing p-type ZnO.
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