Abstract
The Rabi oscillation of the thin bulk semiconductor GaAs, which takes into account the effect of the local-field correction induced by the interacting excitons, is investigated by numerically solving the semiconductor Bloch equations. It is found, for a 2π few-cycle pulse excitation, that two incomplete Rabi-floppings emerge due to the competition between the Rabi frequency of the incident pulse and the internal-field matrices. Furthermore, for a sub-cycle 2π pulse excitation a complete Rabi-flopping can occur because of the absolute phase effect. We ascribe these characteristics of the Rabi oscillation to the renormalized Rabi frequency.
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