Abstract
The spin-valve structures with the configuration of NiFeCo(42.5Å)/CoFe(15Å)/ Cu(25Å)/CoFe(42.5Å)/CrPtMn(300Å) were fabricated by RF diode sputtering. After a annealing process, the sheet spin-valve thin films were photolithographically patterned into serpentine resistors with different linewidths. The effect of linewidths on the magnetic properties and GMR ratio of patterned spin-valve resistors were studied. It was found GMR decrease with decreasing linewidths due to size effect and the effective anisotropy field Hk and the bias field field Hb are both inversely proportional to linewidths.
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