The lineshape of the L2,3 VV Auger spectrum of silicon

Abstract

An attempt is presented to understand the details of the lineshape of the Si L2,3 VV Auger spectrum from the (111) surface in the 7 × 7 superstructure. In the experiments we have followed the variation of the lineshape induced by adsorption of O2, H2O, CO and by bombardment with 3 keV Ar+ ions, over a range from a small perturbation of the surface to major changes in surface structure. For small perturbations from the clean surface we were able to resolve changes in the local density of states at surface silicon atoms. By unfolding the experimental spectra, effective transition densities of states result, which compare quite closely with calculated densities of states, apart from a certain enhancement of surface features in the experiments. All peaks in the experimental spectra can be explained, based on densities of states at the surface of pure Si(111) (7 × 7) (91.8 and 84.8 eV), Si(111) + adsorbed oxygen (70.6 eV), SiO2, (78.9 and 64.5 eV) and plasmon losses, at 71.0 and 57.5 eV for the clean surface.