Abstract

DUV LEDs have very low light extraction efficiency (LEE), which is caused by the unique optical polarization and the optically absorptive semiconductor and metal layers. This chapter reviews and analyzes the approaches that have ever been used to improve the LEE. This chapter also points out that, the removal of the p-GaN layer can yield a high LEE without guaranteeing the enhanced wall plug efficiency in the same time. Thus, even more effort shall be made to achieve excellent ohmic contact for DUV LEDs.

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