Abstract
The Roosbroeck-Shockley theory of radiative recombination of electrons and holes in semiconductors is extended to the case of degenerate semiconductors and applied to InSb. The experimental optical absorption curves of various n-type and p-type samples are analysed and results given for the lifetime of added carriers for this process alone as a function of the position of the Fermi level. An extrapolation indicates a decay time for a small disturbance in carrier concentration in intrinsic material of 0.75μsec. Comparison with experimental results indicates that this process may be predominant in InSb.
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