Abstract
The dedicated CP violation experiment at the Large Hadron Collider (LHC), LHCb, will be equipped with a novel silicon detector (Vertex Locator—VELO). The VELO will provide precise measurements of tracks from displaced b-vertices and will allow to trigger on them. The entire detector will be housed in a mobile secondary vacuum system, and after the injection and stabilisation of the beams each fill, the silicon detectors will move inwards and approach to within 7 mm of the beams. In order to fulfill the trigger requirements, the VELO must combine in an unprecedented way the use of high resolution silicon detectors and large CPU farms. The extreme, non-uniform radiation environment puts additional constraints on the sensor design. The design of the VELO is described, along with the R&D of the silicon sensors and its production status.
Highlights
At the Large Hadron Collider a high yield of about 1012 bb-pairs per year will be produced in 14 TeV pp-collisions
Measurements of CP violation using many different b-hadron decay modes will over-constrain the prediction of the Standard Model and will reveal possible inconsistencies pointing to New Physics
To allow measurements as close as possible to the interaction vertex the Vertex Locator (VELO) sensors approach the beam by 7 mm, a distance smaller than the aperture required during injection
Summary
At the Large Hadron Collider a high yield of about 1012 bb-pairs per year will be produced in 14 TeV pp-collisions. The LHCb detector is designed as a single arm spectrometer to exploit the strongly correlated, forward peaked production of bb-hadrons. It covers an angular range of 15 − 300 mrad. For a precise vertexing it is important to have short extrapolation distances to the vertex and minimal multiple scattering between the first measured point and the vertex As a good signal-to-noise performance for at least 2 years is required while the detector is operating in a high and non-uniform radiation environment, special attention was given to the sensor and front-end chip R&D
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