Abstract
We have studied the forward bias behaviour of AlGaAs/GaAs p-i-n Multi-Quantum-Well (MQW) photodiodes. In samples with low background impurity levels in the intrinsic region the high quantum efficiency observed in reverse bias is maintained into forward bias even for carriers photo-excited in the wells. We compare our MQW devices with structures which are identical apart from having AlGaAs intrinsic regions without quantum wells. The short-circuit currents in the MQW structures are much higher than in the control samples though the open-circuit voltages are somewhat smaller. In one case the energy conversion efficiency of the MQW device in white light is 110% higher than the control. We discuss the implications of our results for the development of Low-Dimensional Structure (LDS) solar cells.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
