The lattice location of ion-implanted Ga, Ge, and Se in InP

Abstract

The lattice location of ion-implanted Ga, Ge, and Se in InP has been determined with a combined Rutherford backscattering spectrometry/channeling and proton-induced x-ray emission technique. It is shown that Ga exclusively occupies the In position and Se the P position, whereas the Ge atoms are distributed equally between both sites (the relative population has been found to be 0.50±0.08). Differential Hall/resistivity measurements demonstrate n-type doping for all three dopants; the electrical activity for Ge and Se was found to be 12% and 25%, respectively, whereas the electrical activity for Ga is as low as 0.05%. A significantly lower mobility, however, is observed in the case of Ge doping relative to Se, despite the much lower carrier concentration; this is argued to be due to a higher concentration of ionized scattering centers in the case of Ge, in agreement with the amphoteric behavior observed with channeling.