Abstract
Understanding the interaction between spin of the charge carriers and local magnetic moments in diluted magnetic oxide is an important issue for applications in spintronic devices. This study examines amorphous Cr-doped In2O3 diluted magnetic oxide thin films for the existence of the Kondo effect and a general s-d scattering effect on the magneto transport, as well as for the well known 3D weak localization effect that explains the low temperature transport behavior of transparent conducting oxides. The carrier transport behavior at low temperature can be accurately described and well fit by a combination of these effects. At temperatures lower than the minimum resistivity temperature, the Kondo effect dominates the magnetoresistance effect and is responsible for the enhancement of resistivity.
Highlights
Transition metal (TM) doped diluted magnetic semiconductors (DMSs) and diluted magnetic oxides (DMOs) are highly anticipated for their potential use in spintronics applications.[1,2] In III-V DMSs, such as (Ga,Mn)As, there has already been significant research progress, practical manipulation is still limited by low Tc.[3]
The Kondo effect and weak localization (WL) have both been observed in DMOs and DMSs systems.[11,12,13]
Amorphous Cr+3 doped Cr-doped In2O3 (CIO) thin films have been systematically studied for their magneto-transport properties
Summary
Transition metal (TM) doped diluted magnetic semiconductors (DMSs) and diluted magnetic oxides (DMOs) are highly anticipated for their potential use in spintronics applications.[1,2] In III-V DMSs, such as (Ga,Mn)As, there has already been significant research progress, practical manipulation is still limited by low Tc.[3] On the other hand, DMOs such as Co-doped ZnO or TiO24 seem more promising for spintronic applications, because of a Tc far above room temperature. Their controversial origin of ferromagnetism and unpredictable reproducibility in oxide materials make it very difficult to use them in actual applications. A combination of s-d scattering and the Kondo effect can accurately describe the transport behavior under an external magnetic field
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