Abstract
The low temperature atmospheric pressure kinetics of silicon deposition by the thermal decomposition of silane were studied. At 700 and 770°C the deposition rate in the presence of an inert carrier gas was controlled by hydrogen desorption. The activation energy for this desorption is 30 kcal mol −1. With the substitution of hydrogen for the inert carrier gas, the deposition rate decreased and rate control was provided by the surface chemical reaction. The activation energy for this process is 33 kcal mol −1. More rate data are required before the kinetics of this technologically important deposition system can be studied at temperatures below 700°C.
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