The kinetics of oxidation and oxide growth mechanisms on Zr(0001)

Abstract

The oxidation of Zr(0001) was studied by Auger electron spectroscopy, nuclear reaction analysis and work-function measurements at 90, 293 and 473 K. An analysis based on electron attenuation lengths indicates that oxide growth occurs layer by layer at 90 K, layer by layer for ∼ 2 layers followed by island growth into the metal at 293 K, and by an island growth mechanism at 473 K. The sticking coefficient is close to one at all temperatures for coverages up to 1 monolayer (ML). At 90 K the sticking coefficient remains high up to ∼ 5 ML, the surface saturating at a coverage of ∼ 6 ML.