Abstract
In the present paper, the research on the sintering mechanism of BaTiO 3-based Positive Temperature Coefficient of Resistance (PTCR) semiconductive ceramics was carried out. According to the mechanisms of surface diffuse and volume diffuse, the comprehension acting mechanism was suggested, the kinetic equation was proposed at the initial stage of sintering, and the initial stage of sintering process was simulated by a computer. We obtained the object illustrations about the relationships between the grain growth of the initial stage of sintering on BaTiO 3-based PTCR ceramics and sintering temperatures, as well as the particle sizes of raw materials.
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