The kinetics of atomic diffusion to stacking faults and the related special problems in cold-worked alpha brasses

Abstract

The diffusion kinetics of solute atoms to the stacking fault layers were investigated by the Laplace transformation method in binary homogeneous alloys. The room temperature annealing kinetics of stacking faults in cold-worked alpha brasses, which were studied by an X-ray diffraction technique, were analyzed in terms of the present theoretical findings. The chemical diffusivities in cold-worked (filings) Cu−10Zn and Cu−22.7Zn alpha brasses were determined as equal to 1.7×10−21 and 1.5×10−19 cm2/s at room temperature (300 K), respectively. Finally, the concentration of athermal monovacancies was estimated in plastically deformed Cu−10Zn (the particle size 20 μm) and Cu−22.7Zn (the particle size 75 μm) alloys and was found to be about 2.0×1019 and 3.0×1019 cm−3, respectively.