Abstract
The effect of H D substitution in water and formaldehyde on the rate of electroless copper plating and either cathodic deposition or anodic dissolution of copper were studied by EQCM. The kinetic H D isotope effect ( k H k D ) ca. 4.5 was found for H D substitution in formaldehyde and of about 1 when H 2O was replaced by D 2O under open-circuit conditions, indicating the rupture of CH bond of formaldehyde to be the rate-limiting step in electroless copper plating. The k H k D value up to 3 in anodic copper dissolution and cathodic reduction of Cu(II) ions for H D substitution in water suggests that water molecules or hydroxyl ions are involved in the formation of intermediate oxy-(hydroxy-) species. Some synergetic features of mutual enhancement of anodic formaldehyde oxidation and cathodic Cu(II) reduction half-reactions in electroless copper plating are discussed in terms of both an oxygen-containing Cu(I) intermediate and preferable surface structure formation.
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