Abstract
Two methods are used to investigate the very near surface (0 to 10 nm) effect of 3 keV helium implantation into evaporated gold films. X-ray reflection spectroscopy is used to determine the change in density of theimplanted layer and Rutherford backscattering to determine helium concentrations; a maximum of 3.3 He atoms per metal vacancy is reported for a fluence of 4.0 × × 1016 atoms cm−2. The data support the proposition that for implant conditions below those required for exfoliation, there are helium pressures well in excess of 100 kbar within implantation induced voids. Deux methodes ont été utilisées afin d'étudier l'effet de Proche surface (0 à 10 nm) d'implantation de helium à 3 keV dans des couches minces d'or évaporé. La spectroscopie de reflexion par rayons X a étéutilisée afin de determiner tout changement de densité de lacouche implantée et la retrodiffusion de Rutherford afin de determiner les concentrations du helium; on a rapporté un maximum de 3,3 atomes de He par lacune du metal pour une fluence de 4,0 × 1016 atomes cm−2. Les données sort en accord avec la proposition que pour les conditions d'implantation au-dessous de celles requises par l'affouillement, il y a des pressions de helium bien au-dessus de 100 kbar dans les vides induits par l'implantation.
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