Abstract
Infrared Fourier transform spectroscopy has been used to investigate phonon, plasmon, surface polariton and plasma-longitudinal optical phonon coupling in highly donor doped multi quantum wells (GaAs/Al0.33Ga0.67As) and direct band gap n- type AlXGa1-XAs thin layer on GaAs substrate. Using different samples with different concentration of free carriers. The dispersion equation of coupling modes have been calculated by using the condition which the dielectric functions of samples are zero for longitudinal coupled modes and experimental papameters which have been obtained from the best fit p-polarized oblique incidence far infrared reflection spectra. In MQW samples, the free carriers confined to the well and carriers are quasi two dimensional. So, plasmon- LO phonon coupling occur in the well (GaAs). In n- type AlXGa1-XAs thin layer, the coupled modes consist of three branches of the high, intermediate and low frequency modes. Their frequencies depend on both concentration and alloy composition. To analyses the surface polariton modes we carry out attenuated total reflection (ATR) measurements. In order to support our assignment the magnetic field profiles and surface polariton dispersion curves have been calculated.
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