Abstract
The electronic band structure of GaAsNBi spherical quantum dot (QDs) have been calculated under hydrostatically induced pressure using 16 band k.p model and considering the band anticrossing (BAC) interaction between the valence band (VB) of the host material with the N and Bi related resonant impurity level. It has a linear variation in bandgap with different Bi concentration and non-linear in bandgap with varying pressure, for 2.3%N in both the cases. However, small differences are observed in valance band offset (VBO), whereas more considerable changes can be seen in the conduction band offset (CBO) with an increasing hydrostatic pressure, which implies a stronger confinement of charge carriers. Finally, we also studied the percentage of strain distribution and its related properties of GaAsNBi spherical QDs along the radial direction, lattice misfit under biaxial and hydrostatic strain. These QDs are also being used in many applications, including selective frequency operation for optoelectronic devices by tuning distinct mole fraction and pressure.
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