Abstract
This paper presents a 500 V high voltage NLDMOS with breakdown voltage (VBD) improved by field plate technology. Effect of metal field plate (MFP) and polysilicon field plate (PFP) on breakdown voltage improvement of high voltage NLDMOS is studied. The coeffect of MFP and PFP on drain side has also been investigated. A 500 V NLDMOS is demonstrated with a 37 μm drift length and optimized MFP and PFP design. Finally the breakdown voltage 590 V and excellent on-resistance performance (Rsp= 7.88 ohm * mm2) are achieved.
Highlights
For the high voltage NLDMOS in BCD (Bipolar, CMOS, and DMOS) platform implicated in 500 V and even higher voltage, RESURF technology has been widely adopted [1, 2]
This paper presents a detailed study of metal field plate (MFP) and polysilicon field plate (PFP) and their effect on 500 V high voltage NLDMOS
In order to get a 500 V NLDMOS with shortest drift length and without scarifying breakdown voltage, the breakdown voltage drop caused by drift length shortening needs to be compensated by a dedicated field plate design
Summary
For the high voltage NLDMOS in BCD (Bipolar, CMOS, and DMOS) platform implicated in 500 V and even higher voltage, RESURF (reduced surface field) technology has been widely adopted [1, 2]. One or two (even three) metal field plates cover on gate and part of adjacent drift region [7] The function of this Gshield is to shield the impact from drain and reduce the miller capacitance, which is the feedback capacitance between gate and drain (Cds). It improves the frequency characteristics of RFLDMOS and extends the application to higher frequency [8]. This metal field plate will change the electric field distribution of drift region and affect the breakdown voltage of the device. This research result can be adopted as a good reference for other high voltage NLDMOS developments
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