Abstract
Titanium dioxide (TiO2) film was deposited by the direct current pulse magnetron sputtering technique. Then the surface of TiO2 film was implanted by the N ion beam at room temperature. Through this way, N-doped TiO2 (N–TiO2) film was obtained and the band gap of N–TiO2 film was decreased to 2.97 eV. XPS result revealed that N ion was doped into TiO2 film as Ti–N and Ti–NO bonds. N ion was substitutionally/interstitially doped into TiO2 crystal lattice and Ti–N bond was formed. N ion was doped into amorphous TiO2 and Ti–ON bond was formed. The polycrystal TiO2 film could result in that more N ion was substitutionally/interstitially doped into TiO2 crystal lattice, which could effectively narrow the band gap of N–TiO2 film. This work provides a potential N doping method which could be applied commercially.
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