Abstract
Minority carrier mobility has been extracted from I-V measurements on N- and PMOS-transistors entirely processed by means of X-ray lithography with effective channel lengths down to 0.35 mu m. The measurements have been performed within the temperature range 208-403 K (-65 degrees C to +130 degrees C). The accuracy of the mobility determination has been investigated, especially with regard to the determination of the effective channel length and the series resistance. The results indicate a significant mobility reduction for short-channel NMOS devices at temperatures below 300 K. A slight increase of the threshold-voltage is observed in the short-channel region. Both effects can be required by an inhomogeneous lateral doping profile within the channel due to standard submicron technology; this has been confirmed by two-dimensional device simulation. >
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