Abstract
The operation of the inversion-channel resonant-cavity enhanced (RCE) photodetector in a configuration compatible with the vertical-cavity surface-emitting laser (VCSEL) is discussed. The phototransistor uses three strained InGaAs/GaAs quantum wells as the absorbing region and a post-growth dielectric top stack. A quantum efficiency of 41% was obtained at the resonant wavelength of 0.94 mu m, thereby giving a resonant-enhancement factor of 13.5. A bipolar transistor gain of 6.8 at a current density of 10 A/cm/sup 2/ allowed the phototransistor responsivity to reach 2.1 A/W at the resonant wavelength. >
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