Abstract
Abstract Over the past two decades, various techniques have been advanced for the interpretation of pulsed-excitation transient photoconductivity in disordered semiconductors. These procedures can provide information concerning the energy distribution of localized states, together with other properties such as their capture cross-sections. Such information is of considerable value in understanding electronic transport in disordered solids, and in optimizing materials for commercial applications. However, the procedures employ various simplifying assumptions, which may or may not be justified in individual cases. In this study, we examine the advantages and limitations of the most commonly employed procedures for interpreting the transient photocurrent. Numerical simulation is used to generate data for various energy distributions of localized states and measurement conditions. The degree of distortion of the true localized-state distribution which the procedures generate is examined. Although it is often ...
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