Abstract
An analysis has been made of the non-linear C -2-V characteristics exhibited by n-CdTe Schottky barriers. The empirical data are shown to be explained satisfactorily assuming the existence of deep traps at 0.8 eV below the conduction band. The shallow donor concentration inferred from this analysis is close to that calculated by a simpler method which treats the real junction as an equivalent ideal Schottky diode in parallel with a voltage independent capacitance. The latter procedure is shown to be invalid in this instance and an explanation is given for its apparent success.
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