Abstract
SiCf /TC17 composites were fabricated by a method of precursor wire with magnetron sputtering using a vacuum hot pressing (VHP) process and then exposed in vacuum at 973, 1023, 1073 and 1123 K for different times, respectively. The results show that element diffusions include interdiffusion caused by interfacial reaction and concentration gradient, and phase transformation diffusion in matrix. C and Ti mainly carry on reaction diffusion which is the reason of formation and growing up of reaction layer. Si, Al, Mo, Cr, Zr and Sn carry on downhill diffusion at interface of C-coating layer and reaction layer, but this type of diffusion is not obvious. Phase transformation diffusion in matrix lead to that Al diffuse to α phase, Mo and Cr diffuse to β phase, and Sn diffuse to Ti3AlC, so the interfacial interdiffusions of these elements is suppressed. The results of the interfacial thermal stability show that the activation energy of reaction lay growing up is 138 kJ/mol, and the interface of SiCf /TC17 composite is stable for long time while it is used not above 973 K.
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