Abstract
In this paper, we use the transfer matrix method to study the effect of roughness with nonplanar interfaces on spin-dependent transport properties in a magnetic tunnel junction, which consists of two ferromagnetic semiconductor barriers separated by a nonmagnetic (NM) layer. This trilayer is sandwiched between two NM electrodes. The roughness is modeled as a periodic corrugation interface. Based on the effective mass approximation, the spin-dependent transmission probability, and also the dependence of tunnel magnetoresistance (TMR) and electron spin polarization (SP) on the center nonmagnetic layer quantum well width are studied, theoretically, at several different temperatures. The numerical results show that the SP and TMR have an oscillatory behavior as a function of NM layer thickness and the interface roughness/islands degrade the transmission probability. Our results may be useful for the development of nanoelectronic devices.
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