The interface states and series resistance analyzing of Au/SiO2/n-GaAs at high temperatures

Abstract

Abstract The current–voltage ( I – V ) characteristics of Au/SiO 2 /n-GaAs metal-oxide-semiconductor (MOS) type Schottky barrier diodes (SBDs) have been measured in the temperature range of 300–400 K with 25 K steps. From the I – V characteristics of SBDs, the zero-bias barrier height ϕ Bo and ideality factor ( n ) assuming the thermionic emission (TE) mechanism show strong temperature dependence. While n decreases, ϕ Bo increases with increasing temperature. The obtained values of ϕ Bo and n varied from 0.81 eV and 1.33 at 300 K and 0.93 eV and 1.12 at 400 K, respectively. In addition, the interface states distribution profile ( N ss ) as a function of temperature was extracted from the forward-bias I – V measurements by taking into account the bias dependence of the effective barrier height ϕ e and series resistance ( R s ) for the SBDs. The values of R s were performed using the Cheung’s method. Thus, important electrical parameters as a function of temperature were analyzed by using the I – V measurements.